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ZXMN10A07Z
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
100
±20
Unit
V
V
Continuous Drain Current
Steady
State
@ V GS = 10V; T A = 25°C (Note 6)
@ V GS = 10V; T A = 70°C (Note 6)
@ V GS = 10V; T A = 25°C (Note 5)
I D
1.4
1.1
1.0
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I DM
I S
I SM
4.2
2.1
4.2
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J , T STG
Value
1.5
12
2.6
21
83.3
47.4
6.36
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 μ s – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
10
1
R DS(on)
Limited
1.50
1.25
1.00
DC
100μs
100m
10m
1
1s
100ms
10ms
1ms
Single Pulse
T amb =25°C
10 100
V DS Drain-Source Voltage (V)
Safe Operating Area
0.75
0.50
0.25
0.00
0
20
40 60 80 100
Temperature (°C)
Derating Curve
120
140
160
90
80
70
60
50
T amb =25°C
D=0.5
100
Single Pulse
T amb =25°C
D=0.2
20
10
40
30
Single Pulse
D=0.05
D=0.1
0
100μ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
10
1
100μ
1m 10m 100m 1 10
Pulse Width (s)
Pulse Power Dissipation
100
1k
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
2 of 7
www.diodes.com
June 2012
? Diodes Incorporated
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